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May 2005

Special Focus
Biotech:

Microscopy in Multiples
An Array of Solutions

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SMALL MEASURES

Researchers Work to Extend Semiconductor Metrology to Features of 40 nm and Below

Figure
In this false-color image, the large purple rectangle is a chip feature about 40 x 150 nm. The magnified section shows the planes of silicon atoms used to calibrate the measurement.

The features on integrated circuits are getting ever smaller, but exactly how big they are is hard to say. As feature sizes shrink below 100 nm, they have passed the ability of current metrology methods to measure them accurately. "The requirements for metrology as outlined in the roadmap are not being met," says Vladimir Mancevski, chief technology officer of Xidex Corp. (Austin, TX), a developer of carbon nanotube technology. Indeed, the 2004 edition of the International Technology Roadmap for Semiconductors shows a wide swath of red, meaning "manufacturable solutions are not known" for current and future metrology needs.

Several groups are tackling the next-generation metrology problem. Xidex, working with the University of Texas at Austin and the semiconductor manufacturers' consortium SEMATECH (Austin, TX), recently showed that carbon nanotubes can act as the tips of atomic force microscopes (AFM) to scan the surfaces of computer chips for high- resolution metrology. The work is under the auspices of the Advanced Materials Research Center, a cooperative effort between SEMATECH and the state of Texas.

The team started with a conventional silicon tip and, through electro-deposition, placed a catalyst like nickel or cobalt in holes in the tip. They then placed the tip in a chemical vapor deposition chamber and grew the nanotubes. Because they made the holes parallel to each other and made sure the catalyst sat in the holes and nowhere else, they were able to get a fixed array of carbon nanotubes, instead of the clusters that other processes produce.

The multiwalled carbon nanotubes, essentially concentric cylinders of nanotubes, have diameters of around 10 nm and lengths of a few microns. That means they can fit into the deep trenches and small holes in chip designs where standard silicon-tipped AFM probes cannot. They also last much longer. They would have to be changed once a month, as opposed to once a day for a silicon tip, Mancevski says. He sees no reason researchers should not be able to make single-wall nanotubes, which would have a diameter of 1 nm.

Still Using Optics

Another group, at the National Institutes of Standards and Technology (NIST; Gaithersburg, MD), is working on extending optical microscopy down to the same levels. They use a combination of brightfield microscopy and scatterometry to measure features. Using low-numerical-aperture illumination from a 436-nm source, they produce a plane wave that hits the wafer and is scattered by the features. The intensities from various plane waves, which create patterns of constructive and destructive interference in the space above the wafer, give them data that adds up to an image.

Rick Silver, leader of NIST's scatterfield microscopy project, says the method has proved able to tell the difference between lines 38-, 39-, and 40-nm wide. Simulations show that lines 10- to 20-nm wide should not be a problem, either. Because the approach combines two methods used currently, it will be easier for semiconductor manufacturers to adopt and will probably enter wafer fabs in the next few years, Silver says.

Working with SEMATECH, NIST has also developed a set of standards to measure features down to 40 nm. The standards would be used to calibrate the tools used in metrology. "Integrated circuit features have shrunk so much over the last 20 to 30 years that we've got to the point that there are no standards available," says Michael Cresswell, a physicist in NIST's semiconductor electronics division.

To create their ruler, NIST scientists used a selective etch material that removes silicon in all but one crystal lattice orientation, producing lines that are almost atomically smooth. The spacing of silicon lattice planes is known, so it is just a question of illuminating the etched silicon with a high- energy beam of electrons and counting the planes to know how thick the materials are.

"They came out nice and straight and relatively smooth," Cresswell says.

—Neil Savage


SOLAR NANOTECH

Nanotechnology Makes Photovoltaics More Attractive

Climate change and high oil prices are boosting interest in alternative energies. The latest research could finally bring photovoltaics out of the background of the energy debate, based on recent findings that show nanotechnologies can trap light in solar cells, potentially reducing the cost of solar energy.

Researchers at the School of Electronics and Computer Science (ECS) at the University of Southampton (Southampton, UK) designed diffractive-nanostructure arrays on the surface of solar cells to create optical asymmetries that prevent light from escaping. "Our basic idea is that if we pattern on a subwavelength scale (~100 nm), we can make light twist or turn in ways that it would not ordinarily do using standard materials," explains Darren Bagnall of the research group. This light-trapping technology may reduce the thickness of semiconductor materials needed in solar panels, which would translate to lower-cost solar cells.

The next steps of the process will focus on proving the technology in the field and developing a cost-effective method for producing these nanopatterned layers. The ECS approach is funded through the £4.5-million, four-year, "Photovoltaic Materials for the 21st Century" project of the Engineering and Physical Sciences Research Council, a group of six universities and seven companies that hopes to reduce the cost of generating solar-power electricity by 50% by 2008. The project hopes to develop new "thin film" solar cells to replace traditional single-crystal silicon solar cells, which are produced in an expensive high-temperature process. Although less efficient than the traditional solar cells, the new thin films are potentially much cheaper to make.

While reductions in the cost of solar cells will offer tangible benefits, other advances in the United States focus on product efficiency. Carbon nanotube towers atop photovoltaic cells could also help extract more power from the sun, according to scientists at the Georgia Tech Research Institute (GTRI; Atlanta, GA).

The group coated such nanometer-sized towers with special p-type and n-type semiconductor (p/n) junction materials to increase the surface area available to produce electricity. "First, the nanotube 'towers' significantly increase the total surface area available for a photon of light to impinge the p/n-type materials," explains Jud Ready of GTRI. "This impingement is critical as excitons generated by the light dissociate into their separate charges and produce current flow." The group is exploring cadmium telluride, cadmium sulfide, boron/phosphorous-doped silicon, and organic/polymeric materials and plans to assess more exotic photovoltaic materials in the future.

"By appropriately tailoring the aspect ratio of the towers and 'streets' between them, reflected light off of one tower can be scavenged by an adjacent tower," Ready says. "With planar photovoltaic cells, this reflected light, though minimized via various antireflective coatings, is typically reflected back into the atmosphere and wasted. The ballistic conduction properties of the carbon nanotube can allow for significantly more robust and efficient extraction of the charge carriers from the photovoltaic materials. This results in an increase in the electron mobility and improves charge carrier transport to the electrodes."

—Phillip Espinasse


OLEDS/PLEDS

Barriers Still Prevent R2R Printing for Flexible Substrates

Figure
Here, a DVD player prototype that was produced with CDT PLEP technology. Toppan/CDT hopes to produce similar products with R2R technology.

Organic LEDs (OLEDs) offer important advantages over color LCDs. They are brighter and use less power because only the illuminated elements draw electricity, instead of the continuous backlight draw necessary with LCDs. OLEDs are limited to small sizes and low-volume production, however, which keeps prices high and prevents broader use. Efforts between two partnerships—one between Toppan Printing (Tokyo, Japan) and Cambridge Display Technology (CDT; Cambridge, UK), and the other between the U.S. Display Consortium (USDC; San Jose, CA) and Vitex Systems Inc. (San Jose, CA)—hope to reduce the cost of OLEDs through roll-to-roll (R2R) printing processes for OLED production that beat the lifetime barrier facing OLED and light-emitting polymer displays (PLEDs).

Kimberly Allen, director of display technology and strategy at iSuppli Corporation (El Segundo, CA) says, "There is currently quite a lot of interest in printed display technology . . . Toppan/CDT are developing polymer OLED displays, [while] Vitex is working on a third-party encapsulation solution that it can sell to any small-molecule module maker."

The Toppan/CDT partnership is moving into Phase II of its program to develop R2R processing of PLEDs. During Phase I, Toppan/CDT proved the feasibility of roll printing, according to CDT officials. During Phase II, research will concentrate on improving the performance of the roll- printed displays, with the ultimate goal of producing roll-printed displays with the lifetime, efficiency, and color fidelity of more costly inkjet-printed displays. Toppan has invested ¥1 billion in a pilot line for the roll processing of displays based on CDT technology and intends to start with glass substrates but move on to more flexible substrate alternatives such as plastic.

Phase II of the R2R project will focus on improving patterning technology, manufacturing technology based on printing, barrier technology for packaging, and materials such as dendrimers and polymers that the company expects to come from CDT, Toppan says. "At the moment, we are not at a stage where we can speak about specific progress," says Takao Taguchi, spokesman for Toppan Printing, "but we expect significant results in three to four months."

Across the Pacific Ocean, USDC has contracted with Vitex to use its flexible glass substrate technology to develop high-volume R2R capability that can produce flexible OLEDs. Vitex's glass is thin, clear, flexible, and reportedly exhibits barrier properties similar to a sheet of glass. The substrate is actually plastic and relies on Vitex's Barix technology, which uses alternating layers of polymer and ceramic thin films to resolve the moisture and oxygen sensitivity problems that limit OLED lifetimes.

Allen of iSuppli says, "Flexible OLEDs cannot reach the market until there is adequate barrier technology to protect the organic materials from water vapor in the air. Vitex is hoping to sell its coated substrates, which should provide this barrier to OLED makers, but its technology is not adequate. Most OLED companies, including Toppan/CDT, are working on their own barriers, but they have not succeeded yet either."

Michael L. Kleper, a full professor and member of the senior faculty at Rochester Institute of Technology (Rochester, NY) says, "The commercial printing industry is at the threshold of the door of opportunity presented by printed electronics. It offers great promise for not only revitalizing the traditional print industry, but enabling the mass production of inexpensive electronic components and devices. The materials science work that is being undertaken by Toppan/CDT and USDC/Vitex is evidence that a printed electronics world is definitely a part of the future."

Despite Kleper's enthusiasm, analysts caution that price is always a factor in the end. So-called engineered plastic substrates—layers of coatings and barriers—cost much more than simple glass. "The display market has long proved that a premium price for premium qualities like flexibility sounds good on paper but doesn't hold up in the market," Allen says. "OEMs will want the same price as glass. While there may be some compromise at a slightly higher price, flexible display makers will still have to work hard to reduce costs."

—Charles Whipple


LASERS

New Class of Raman Lasers Offers High Gain and Compactness

Figure
The figure shows the MBE-grown semiconductor injection Raman laser.

Based on the nonlinear optical process, stimulated by Raman scattering, traditional Raman lasers typically exhibit small gains and require external pumping with powerful lasers, which limits their application. In a joint collaboration between Harvard University (Cambridge, MA) and Texas A&M University (College Station, TX), researchers fabricated a semiconductor injection Raman laser operating with a gain of 10-3 cm/W, 4 to 5 orders of magnitude higher than in most existing Raman lasers (see figure).

"It is this high value of the gain that allowed us to achieve Raman lasing in such a small device and with such a low optical pump power: 40 mW," explains Alexey Belyanin of Texas A&M. Based on an indium gallium arsenide/indium aluminum arsenide heterostructure, the device was grown by molecular beam epitaxy and lattice-matched to an indium phosphide substrate. The optical source and the Raman generation are realized monolithically in the same material by appropriately engineering the band structure of a quantum cascade laser. "This allows us to use intracavity excitation instead of excitation from an external source and, more importantly, allows us to regenerate the exciting radiation all along the cavity, therefore getting around the problem of absorption of the fundamental radiation," explains Mariano Troccoli of the research team.

The group is focusing on achieving broad tunability by applying the electric field and operating in the THz range at room temperature. While achieving tunability is quite feasible via design changes, THz generation may not be as trivial. This novel laser will find use in applications similar to those of mid- and far-IR lasers, particularly in areas of sensing, imaging, bio/chemical analysis, and national security and defense, with the advantage that these lasers are capable of larger tunability.

—Phillip Espinasse



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